IGBT is a combination of VDMOS and bipolar transistor. It combines the advantages of MOSFET and GTR, which has the characteristics of high input impedance of power MOSFET, high speed, good thermal stability, low driving power, and low GTR on-state voltage. The advantages of low conduction loss and high withstand voltage can meet the requirements well.
Insulated gate bipolar transistor (IGBT) design power electronic switch can meet the timely opening, timely turn-off, eliminate delay, three-phase switching and simultaneous, no noise during operation, is an ideal switching component, and is of high quality The premise of the system transient stability test is provided. Based on this, a set of open circuit and short circuit device ABFSD (Advanced Breaking Fault Simulation Device) realized by IGBT dynamic switch was developed.
Insulated Gate Bipolar Transistor (IGBT) switches are power electronic switches implemented with IGBTs as the core. Since the IGBT is a voltage-driven device, its basic working principle is that when the gate is positively controlled, the anode current is turned on; when the gate is applied with zero voltage, the anode current is turned off.
In theory, the switch can be implemented in two ways: series and parallel. Due to the capacitance inside the IGBT, it is found that the series-type switch cannot turn off the AC current during the actual shutdown test; and the parallel-type switch uses the series-connected diodes. Therefore, the switch mode is selected as the IGBT string isotropic diode will be anti-parallel, and because the circuit breaker is divided into a large inductive load, in order to prevent the surge voltage from being too high, a resistor-capacitor absorption loop is incorporated on both sides of the switch.
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