In 2010, Taiwan's LED lighting output value increased by 65%, the first breakthrough of 100 billion Taiwan dollars, the scale reached 151.6 billion yuan, will continue to grow 32% in 2012, challenging the output value of 200 billion yuan. And the overall LED market supply and demand, whether China's production capacity will be opened will be the key.
Among them, LED lighting will become one of the driving forces for the growth of Taiwan's optoelectronic industry. In 2011, high-power LEDs are estimated to fall between 15-20%. From a global perspective, LED lighting accounted for only 3% of the overall lighting market in 2010, and is expected to grow to 5% in 2011. In 2012, it will reach 11%, and the overall LED lighting output value will exceed 10 billion US dollars. Last year, lighting applications accounted for only 14% of LED applications. By 2014, it is estimated to account for 24%, second only to signal and indicator applications.
Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors.
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