On the morning of February 16, the 2012 Science and Technology Awards Conference of Shandong Province was held in the Nanjiao Hotel Hall. The conference commended and rewarded the scientific and technological staff who won the national and Shandong science and technology awards in 2011. Among them, the results of Inspur Huaguang "863" project - "high-power 808nm asymmetric aluminum-free strain quantum well laser" won the second prize of 2011 Shandong Province Technology Invention. Dr. Xia Wei, Technical Director of Shandong Inspur Huaguang Optoelectronics Co., Ltd. took the stage and received a certificate of honor.
The research results of the "High Power 808nm Asymmetric Aluminum-free Strained Quantum Well Laser" project have achieved three key technological breakthroughs in the laser field: the first development of a semiconductor laser with SiC heat sink package in China, effectively reducing the thermal resistance of the device and greatly improving the semiconductor Long-term reliability of the laser. Innovatively designed asymmetric waveguides and new large-cavity semiconductor lasers to further increase the maximum optical power output and photoelectric conversion efficiency of semiconductor lasers. The application of the aluminum-free strained quantum well laser epitaxial material reduces the defect generation and the rate of cavity surface degradation, which greatly increases the long-term working life of the laser.
The high-power 808nm asymmetric aluminum-free strained quantum well laser is also another fruitful achievement in cooperation with the production, research and research of Shandong University. Through the close combination of the research and development advantages of the university and the production advantages of the industry, it has successfully achieved large-scale production and has become a material for domestic and international extension. , chip production, device packaging, the entire industry chain. Its technical level has reached the international advanced level through the comprehensive evaluation of experts. It has been widely used in laser crystal pumping, infrared illumination, laser medical treatment, laser processing, laser display and other fields, driving the output value of related industries to nearly 10 billion yuan. The goal of localization of core key original devices has been realized, which has promoted the rapid development of China's laser industry.
Inspur Huaguang Xia always took the stage to receive the award
The research results of the "High Power 808nm Asymmetric Aluminum-free Strained Quantum Well Laser" project have achieved three key technological breakthroughs in the laser field: the first development of a semiconductor laser with SiC heat sink package in China, effectively reducing the thermal resistance of the device and greatly improving the semiconductor Long-term reliability of the laser. Innovatively designed asymmetric waveguides and new large-cavity semiconductor lasers to further increase the maximum optical power output and photoelectric conversion efficiency of semiconductor lasers. The application of the aluminum-free strained quantum well laser epitaxial material reduces the defect generation and the rate of cavity surface degradation, which greatly increases the long-term working life of the laser.
The high-power 808nm asymmetric aluminum-free strained quantum well laser is also another fruitful achievement in cooperation with the production, research and research of Shandong University. Through the close combination of the research and development advantages of the university and the production advantages of the industry, it has successfully achieved large-scale production and has become a material for domestic and international extension. , chip production, device packaging, the entire industry chain. Its technical level has reached the international advanced level through the comprehensive evaluation of experts. It has been widely used in laser crystal pumping, infrared illumination, laser medical treatment, laser processing, laser display and other fields, driving the output value of related industries to nearly 10 billion yuan. The goal of localization of core key original devices has been realized, which has promoted the rapid development of China's laser industry.
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